| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Manufacturer |
NXP Semiconductors |
| Case |
TO1 |
| Vbr CBO |
25 |
| Vbr CEO |
15 |
| Max. PD (W) |
1.0 |
| Max. hFE |
500 |
| Min hFE |
100 |
| Ic Max. (A) |
1.0 |
| @Ic (test) (A) |
300m |
| Icbo Max. @Vcb Max. (A) |
200u |
| Polarity |
PNP |
| Derate Above 25°C |
25m |
| Trans. Freq (Hz) Min. |
1.5M |
| Oper. Temp (°C) Max. |
100 |
| @VCE (V) |
1.0 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.225 W |
| Maximum Collector-Base Voltage |Vcb| |
25 V |
| Maximum Collector-Emitter Voltage |Vce| |
15 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
2 A |
| Max. Operating Junction Temperature (Tj) |
90 °C |
| Collector Capacitance (Cc) |
110 pF |
| Transition Frequency (ft): |
1 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SKU |
16845 |