| Weight | 0.01 kg | 
    
    
    
                  
      | Case | TO1 | 
              
      | Type | Transistor Germanium  PNP | 
        
      | Manufacturer | NXP Semiconductors | 
            
      | Vbr CBO | 25 | 
        
      | Vbr CEO | 15 | 
        
      | Max. PD (W) | 1.0 | 
        
      | Max. hFE | 500 | 
        
      | Min hFE | 100 | 
        
      | Ic Max. (A) | 1.0 | 
        
      | @Ic (test) (A) | 300m | 
        
      | Icbo Max. @Vcb Max. (A) | 200u | 
        
      | Polarity | PNP | 
        
      | Derate Above 25°C | 25m | 
        
      | Trans. Freq (Hz) Min. | 1.5M | 
        
      | Oper. Temp (°C) Max. | 100 | 
        
      | @VCE (V) | 1.0 | 
        
      | Pinout Equivalence Number | 3-12 | 
            
      | Surface Mounted Yes/No | NO | 
        
      | Maximum Collector Power Dissipation (Pc) | 0.225 W | 
        
      | Maximum Collector-Base Voltage |Vcb| | 25 V | 
        
      | Maximum Collector-Emitter Voltage |Vce| | 15 V | 
        
      | Maximum Emitter-Base Voltage |Veb| | 10 V | 
        
      | Maximum Collector Current |Ic max| | 2 A | 
        
      | Max. Operating Junction Temperature (Tj) | 90 °C | 
        
      | Collector Capacitance (Cc) | 110 pF | 
        
      | Transition Frequency (ft): | 1 MHz | 
        
      | Forward Current Transfer Ratio (hFE), MIN | 100 | 
        
      | SKU | 16845 |