| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
TO1 |
| Manufacturer |
Siemens Semiconductors |
| Vbr CBO |
32 |
| Vbr CEO |
30 |
| Max. PD (W) |
150m |
| C(ob) (F) |
35p |
| hfe |
38 |
| Icbo Max. @Vcb Max. (A) |
12u |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
400k |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.05 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.05 A |
| Max. Operating Junction Temperature (Tj) |
75 °C |
| Collector Capacitance (Cc) |
40 pF |
| Forward Current Transfer Ratio (hFE), MIN |
38 |
| SKU |
118230 |