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ACY23V
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ACY23V

SKU: ACY23V
ACY23V Transistor Germanium PNP CASE: TO1 MAKE: Siemens Semiconductors
Product specifications
Equivalent ACY23VI
Type Transistor Germanium PNP
Case TO1
Manufacturer Siemens Semiconductors
Vbr CBO 32
Vbr CEO 30
Max. PD (W) 300m
C(ob) (F) 27p
Derate (Amb) (W/°C) 3.3m
hfe 100=
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 18u
Polarity PNP
Trans. Freq (Hz) Min. 1.5M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.9 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 16 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 80 °C
Collector Capacitance (Cc) 90 pF
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 403432
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