| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
TO3 |
| Manufacturer |
Betts |
| Vbr CBO |
32 |
| Vbr CEO |
30 |
| Max. PD (W) |
30 |
| Max. hFE |
100 |
| Min hFE |
30 |
| Ic Max. (A) |
3.5 |
| @Ic (test) (A) |
1.0 |
| Ir @ Diff. Temp (A) |
100u |
| VRRM |
150 |
| Polarity |
PNP |
| 1-Cycle Surge Current (A) |
.30 |
| @Temp (test) (°C) |
150 |
| Derate Above 25°C |
666m |
| Vf Max. |
1.0 |
| Ir @25°C |
.50u |
| I(out) (If AVG) Max. |
40m |
| Trans. Freq (Hz) Min. |
450k |
| @Volts (test) (V) |
150 |
| @If (test) |
1.0m |
| Oper. Temp (°C) Max. |
100 |
| @VCE (V) |
1.0 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
27 W |
| Maximum Collector-Base Voltage |Vcb| |
32 V |
| Maximum Collector-Emitter Voltage |Vce| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
3.5 A |
| Max. Operating Junction Temperature (Tj) |
100 °C |
| Transition Frequency (ft): |
0.45 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
83580 |