Weight |
0.01 kg
|
Type |
Transistor Germanium NPN |
Manufacturer |
Vishay Semiconductor |
Case |
SOT9 |
Vbr CBO |
25 |
Vbr CEO |
20 |
Max. PD (W) |
5.3 |
Max. hFE |
185- |
Min hFE |
60 |
Ic Max. (A) |
1.0 |
@Ic (test) (A) |
500m |
Icbo Max. @Vcb Max. (A) |
300u |
Polarity |
NPN |
Derate Above 25°C |
118m |
Oper. Temp (°C) Max. |
100 |
@VCE (V) |
1.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
5 W |
Maximum Collector-Base Voltage |Vcb| |
25 V |
Maximum Collector-Emitter Voltage |Vce| |
20 V |
Maximum Emitter-Base Voltage |Veb| |
10 V |
Maximum Collector Current |Ic max| |
1 A |
Max. Operating Junction Temperature (Tj) |
90 °C |
Transition Frequency (ft): |
0.5 MHz |
Forward Current Transfer Ratio (hFE), MIN |
60 |
SKU |
84665 |