| Type | Transistor Germanium PNP | |
| Case | TO1 | |
| Manufacturer | Siemens Semiconductors | |
| Vbr CBO | 32 | |
| Max. PD (W) | 100m | |
| Derate (Amb) (W/°C) | 2.2m | |
| hfe | 85 | |
| Ic Max. (A) | 30m | |
| Icbo Max. @Vcb Max. (A) | .40u | |
| Polarity | PNP | |
| Trans. Freq (Hz) Min. | 5.0M | |
| @VCE (test) (V) | 10 | |
| Oper. Temp (°C) Max. | 100 | |
| @Ic (A) | 3.0m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.225 W | |
| Maximum Collector-Base Voltage |Vcb| | 32 V | |
| Maximum Collector Current |Ic max| | 0.03 A | |
| Max. Operating Junction Temperature (Tj) | 90 °C | |
| Collector Capacitance (Cc) | 0.8 pF | |
| Transition Frequency (ft): | 100 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 84001 | |