| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
TO1 |
| Manufacturer |
Siemens Semiconductors |
| Vbr CBO |
32 |
| Vbr CEO |
32 |
| Max. PD (W) |
225m |
| Derate (Amb) (W/°C) |
2.2m |
| Ic Max. (A) |
32m |
| Icbo Max. @Vcb Max. (A) |
.40u |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
500M |
| Oper. Temp (°C) Max. |
100 |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.225 W |
| Maximum Collector-Base Voltage |Vcb| |
32 V |
| Maximum Collector Current |Ic max| |
0.03 A |
| Max. Operating Junction Temperature (Tj) |
90 °C |
| Collector Capacitance (Cc) |
1.5 pF |
| Transition Frequency (ft): |
300 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
83759 |