Weight |
0.01 kg
|
Manufacturer |
ST Microelectronics - STM |
Case |
SOT9 |
Type |
Transistor Germanium PNP |
Vbr CBO |
130 |
Vbr CEO |
60 |
Max. PD (W) |
10 |
Max. hFE |
200 |
Min hFE |
20 |
Ic Max. (A) |
6.0 |
@Ic (test) (A) |
500m |
Icbo Max. @Vcb Max. (A) |
10m |
Polarity |
PNP |
Derate Above 25°C |
250m |
Trans. Freq (Hz) Min. |
3.0M |
Oper. Temp (°C) Max. |
100 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
35 V |
Maximum Collector-Emitter Voltage |Vce| |
20 V |
Maximum Emitter-Base Voltage |Veb| |
2 V |
Maximum Collector Current |Ic max| |
4 A |
Max. Operating Junction Temperature (Tj) |
100 °C |
Transition Frequency (ft): |
2 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
84675 |