AT200

SKU: AT200

AT200 Transistor Germanium PNP CASE: TO3 MAKE: ATES

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	ATES
Vbr CBO	320
Max. PD (W)	5.0
Ic Max. (A)	10
Icbo Max. @Vcb Max. (A)	200u
Polarity	PNP
Derate Above 25°C	166m
Oper. Temp (°C) Max.	100
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	320 V
Maximum Collector-Emitter Voltage \|Vce\|	160 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	90 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	533708

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