Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Germanium PNP |
Manufacturer |
ATES |
Vbr CBO |
320 |
Vbr CEO |
320 |
Max. PD (W) |
5.0 |
Max. hFE |
80 |
Min hFE |
15 |
Ic Max. (A) |
10 |
@Ic (test) (A) |
6.0 |
Icbo Max. @Vcb Max. (A) |
300u |
Polarity |
PNP |
Derate Above 25°C |
666m |
Trans. Freq (Hz) Min. |
2.0M |
Oper. Temp (°C) Max. |
100 |
@VCE (V) |
1.3 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
5 W |
Maximum Collector-Base Voltage |Vcb| |
320 V |
Maximum Emitter-Base Voltage |Veb| |
1 V |
Maximum Collector Current |Ic max| |
10 A |
Max. Operating Junction Temperature (Tj) |
85 °C |
Transition Frequency (ft): |
1 MHz |
Forward Current Transfer Ratio (hFE), MIN |
15 |
SKU |
82585 |