Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Germanium PNP |
Manufacturer |
Siemens Semiconductors |
Vbr CBO |
100 |
Vbr CEO |
55 |
Max. PD (W) |
30 |
Max. hFE |
110 |
Min hFE |
30 |
Ic Max. (A) |
10 |
@Ic (test) (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
PNP |
Derate Above 25°C |
667m |
Trans. Freq (Hz) Min. |
450k |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
30 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Emitter-Base Voltage |Veb| |
40 V |
Maximum Collector Current |Ic max| |
10 A |
Max. Operating Junction Temperature (Tj) |
100 °C |
Transition Frequency (ft): |
0.12 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
81989 |