The B772 is a bipolar transistor 2SB772, created for use in the output cascades of amplifiers, voltage converters, low-power device drives. It is made out of Silicon (Si) and has plastic packageTO-126. The B772 transistor has following characteristics:
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Transistor KSB772;
Transistor MJE235;
Transistor MJE254.
Case | TO126 | |
Type | Transistor Silicon PNP | |
Manufacturer | NEC | |
Polarity | PNP | |
Maximum Collector Power Dissipation (Pc) | 0.5 W | |
Maximum Collector-Base Voltage |Vcb| | 40 V | |
Maximum Collector-Emitter Voltage |Vce| | 30 V | |
Maximum Emitter-Base Voltage |Veb| | 5 V | |
Maximum Collector Current |Ic max| | 3 A | |
Max. Operating Junction Temperature (Tj) | 150 °C | |
Transition Frequency (ft): | 50 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 60 | |
SKU | 133766 |