| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO18 |
| Manufacturer |
ST Microelectronics - STM |
| Vbr CBO |
50 |
| Vbr CEO |
45 |
| Max. PD (W) |
600m |
| Derate (Amb) (W/°C) |
2.2m |
| hfe |
120 |
| Ic Max. (A) |
200m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
200M |
| @VCE (test) (V) |
5.0 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
45 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
7 pF |
| Transition Frequency (ft): |
130 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
120 |
| SKU |
16806 |