Weight |
0.01 kg
|
Case |
TO18 |
Type |
Transistor Silicon PNP |
Manufacturer |
Microsemi Corporation |
Vbr CBO |
25 |
Vbr CEO |
25 |
Max. PD (W) |
400m |
C(ob) (F) |
12p |
Derate (Amb) (W/°C) |
2.2m |
hfe |
60 |
Ic Max. (A) |
500m |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
100M |
@VCE (test) (V) |
5.0 |
Oper. Temp (°C) Max. |
175 |
@Ic (A) |
50m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.4 W |
Maximum Collector-Base Voltage |Vcb| |
25 V |
Maximum Collector-Emitter Voltage |Vce| |
25 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.5 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
12 pF |
Transition Frequency (ft): |
100 MHz |
Forward Current Transfer Ratio (hFE), MIN |
60 |
SKU |
86266 |