Weight |
0.01 kg
|
Type |
Transistor Silicon PNP |
Manufacturer |
NXP Semiconductors |
Case |
TO106 |
Vbr CBO |
50 |
Vbr CEO |
45 |
Max. PD (W) |
250m |
Derate (Amb) (W/°C) |
2.5m |
hfe |
75 |
Ic Max. (A) |
100m |
Icbo Max. @Vcb Max. (A) |
15u |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
150M |
@VCE (test) (V) |
5.0 |
Oper. Temp (°C) Max. |
125 |
@Ic (A) |
2.0m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.25 W |
Maximum Collector-Base Voltage |Vcb| |
50 V |
Maximum Collector-Emitter Voltage |Vce| |
45 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.1 A |
Max. Operating Junction Temperature (Tj) |
125 °C |
Collector Capacitance (Cc) |
9 pF |
Transition Frequency (ft): |
75 MHz |
Forward Current Transfer Ratio (hFE), MIN |
72 |
SKU |
86806 |