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BC556AP
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BC556AP

SKU: BC556AP
BC556AP Transistor Silicon PNP CASE: TO226 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO226
Manufacturer Generic
Vbr CBO 80
Vbr CEO 65
Max. PD (W) 500m
C(ob) (F) 4.5p
Derate (Amb) (W/°C) 4.0m
hfe 120
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 15n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 125
SKU 742045
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