BC847BDW1T1G
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BC847BDW1T1G

SKU: BC847BDW1T1G
BC847BDW1T1G Transistor Silicon NPN CASE: SOT363 MAKE: ON Semiconductor
Datasheet
BC847BDW1T1G Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT363
Manufacturer ON Semiconductor
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.38 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code 1F
SKU 519838
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