| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT363 |
| Manufacturer |
Philips |
| Polarity |
NPN |
| Maximum Collector Power Dissipation (Pc) |
0.25 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
6 pF |
| Transition Frequency (ft): |
300 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
520 |
| SMD Transistor Code |
1G_1G-_1Gp_1Gs_1Gt_1GW_K1M |
| SKU |
135008 |