| Weight |
0.01 kg
|
| Equivalent |
BC860CR |
| Type |
Transistor Silicon PNP |
| Case |
SOT23 |
| Manufacturer |
Philips |
| Vbr CBO |
50 |
| Vbr CEO |
45 |
| Max. PD (W) |
225m |
| C(ob) (F) |
4.5p |
| Derate (Amb) (W/°C) |
1.8m |
| hfe |
800= |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
15n |
| Polarity |
PNP |
| Trans. Freq (Hz) Min. |
150M- |
| @VCE (test) (V) |
5.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
6 pF |
| Transition Frequency (ft): |
300 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
520 |
| SMD Transistor Code |
4G_4Gp_4Gs_4Gt_4GW_4GZ_9EC |
| SKU |
366474 |