The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BCM847BV
View detailed images (5)

BCM847BV

SKU: BCM847BV
BCM847BV Transistor Silicon NPN CASE: SOT666 MAKE: Infineon - Siemens
Datasheet
BCM847BV Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT666
Manufacturer Infineon - Siemens
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code 3A
SKU 1425592
Back