The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BCM847DS

BCM847DS

SKU: BCM847DS
BCM847DS Transistor Silicon NPN CASE: SOT457 MAKE: Infineon - Siemens
Datasheet
BCM847DS Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT457
Manufacturer Infineon - Siemens
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 1.5 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code R6
SKU 1425593
Back