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BCP55-10
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BCP55-10

SKU: BCP55-10
BCP55-10 Transistor Silicon NPN CASE: SOT223 MAKE: Philips
Datasheet
BCP55-10 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT223
Manufacturer Philips
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.5
Max. hFE 160
Min hFE 63
Ic Max. (A) 1.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 130M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 4-105
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN 63
SMD Transistor Code BG
SKU 597974
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