BCR08PN
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BCR08PN

SKU: BCR08PN
BCR08PN Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Siemens Semiconductors
Datasheet
BCR08PN Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 170 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code WFs
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 577672
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