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BCR108S
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BCR108S

SKU: BCR108S
BCR108S Transistor Silicon Pre-Biased-NPN CASE: SOT363 MAKE: Siemens Semiconductors
Datasheet
BCR108S Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT363
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 170 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code WHs
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 577673
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