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BCR10PN
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BCR10PN

SKU: BCR10PN
BCR10PN Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Siemens Semiconductors
Datasheet
BCR10PN Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code W1s
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 577675
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