BCR112W
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BCR112W

SKU: BCR112W
BCR112W Transistor Silicon NPN CASE: SOT323 MAKE: Infineon - Siemens
Datasheet
BCR112W Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT323
Manufacturer Infineon - Siemens
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code WFs
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 598464
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