BCR116
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BCR116

SKU: BCR116
BCR116 Transistor Silicon NPN CASE: SOT23 MAKE: Siemens Semiconductors
Datasheet
BCR116 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 160 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code WGs
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 406935
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