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BCR141S
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BCR141S

SKU: BCR141S
BCR141S Transistor Silicon Pre-Biased-NPN CASE: SOT363 MAKE: Siemens Semiconductors
Datasheet
BCR141S Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT363
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code WDs
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 1
SKU 577678
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