BCR196W
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BCR196W

SKU: BCR196W
BCR196W Transistor Silicon NPN CASE: SOT323 MAKE: Siemens Semiconductors
Datasheet
BCR196W Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT323
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.07 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code WXs
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 22 kOhm
Typical Resistor Ratio R1/R2 2.1
SKU 577688
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