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BCR198S
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BCR198S

SKU: BCR198S
BCR198S Transistor Silicon PNP CASE: SOT363 MAKE: Siemens Semiconductors
Datasheet
BCR198S Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT363
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.07 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 190 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code WRs
Built in Bias Resistor R1 47 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 1
SKU 135626
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