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BCR35PN
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BCR35PN

SKU: BCR35PN
BCR35PN Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363 MAKE: Siemens Semiconductors
Datasheet
BCR35PN Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code WU_WUs
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 135636
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