BCR512
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BCR512

SKU: BCR512
BCR512 Transistor Silicon NPN CASE: SOT23 MAKE: Siemens Semiconductors
Datasheet
BCR512 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Siemens Semiconductors
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.33 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code XFs
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 740476
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