BCV29

SKU: BCV29

BCV29 Transistor Silicon NPN Darlington CASE: SOT89 MAKE: Philips

Datasheet

BCV29 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN Darlington
Case	SOT89
Manufacturer	Philips
Vbr CEO	30
Max. PD (W)	1.0
Min hFE	4.0k
Ic Max. (A)	500m
@Ic (test) (A)	100u
Icbo Max. @Vcb Max. (A)	100n
Mat.	Silicon Logic
Polarity	NPN
Trans. Freq (Hz) Min.	150M
@VCE (test)	1.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3.5 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	20000
SMD Transistor Code	ED_EF
SKU	740301

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