BCW29

SKU: BCW29

BCW29 SI-PNP - Case: SOT23 Make: NXP Semiconductors

Product specifications

Weight	0.01 kg
Equivalent	BCW29-SMD
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	NXP Semiconductors
Vbr CBO	32
Vbr CEO	32
Max. PD (W)	350m
C(ob) (F)	4.5p
Derate (Amb) (W/°C)	1.8m
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	150M-
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SMD Transistor Code	C1_C1p_C1t_C1W_GC1
SKU	20059

Back