BCW30R

SKU: BCW30R

BCW30R Transistor Silicon PNP CASE: TO236 MAKE: Philips

Datasheet

BCW30R Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO236
Manufacturer	Philips
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	350m
hfe	150
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	150
@Ic (A)	10u
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	215
SMD Transistor Code	C5
SKU	740190

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