BCW32LT1
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BCW32LT1

SKU: BCW32LT1
BCW32LT1 Transistor Silicon NPN CASE: TO236 MAKE: Generic
Datasheet
BCW32LT1 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer ON Semiconductor
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 20058
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