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BCW60B
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BCW60B

SKU: BCW60B
BCW60B Transistor Silicon NPN CASE: SOT23 MAKE: NXP Semiconductors
Datasheet
BCW60B Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer NXP Semiconductors
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 150m
C(ob) (F) 2.5p
t(on) Delay (S) 35n-
Derate (Amb) (W/°C) 1.8m
t(f) Max. (S) 80n-
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 20n
Polarity NPN
Tr Max. (s) 50n-
t(stor) Max. (S) 400n-
Trans. Freq (Hz) Min. 125M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SMD Transistor Code AB_ABp_ABs_ABt_ABW_GAB
SKU 597971
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