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BCW60C
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BCW60C

SKU: BCW60C
BCW60C Transistor Silicon NPN CASE: TO236 MAKE: NXP Semiconductors
Datasheet
BCW60C Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer NXP Semiconductors
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 150m
C(ob) (F) 2.5p
t(on) Delay (S) 35n-
Derate (Amb) (W/°C) 1.8m
t(f) Max. (S) 80n-
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 20n
Polarity NPN
Tr Max. (s) 50n-
t(stor) Max. (S) 400n-
Trans. Freq (Hz) Min. 125M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.5 pF
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN 250
SMD Transistor Code AC_ACp_ACs_ACt_ACW_GAC
SKU 407019
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