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BCW61
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BCW61

SKU: BCW61
BCW61 Transistor Silicon PNP CASE: TO236 MAKE: European Make
Datasheet
BCW61 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer European Make
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 620m
C(ob) (F) 4.5p
Derate (Amb) (W/°C) 1.4m
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
Trans. Freq (Hz) Min. 180M-
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 740114
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