| Weight |
0.01 kg
|
| Equivalent |
BCW66GLT1G |
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
ON Semiconductor |
| Polarity |
NPN |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
75 V |
| Maximum Collector-Emitter Voltage |Vce| |
45 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
0.8 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
12 pF |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
160 |
| SMD Transistor Code |
EG |
| SKU |
559995 |