| Weight |
0.01 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO105 |
| Manufacturer |
NXP Semiconductors |
| Vbr CBO |
15 |
| Vbr CEO |
15 |
| Max. PD (W) |
250m |
| Derate (Amb) (W/°C) |
2.0m |
| hfe |
25 |
| Ic Max. (A) |
20m |
| Icbo Max. @Vcb Max. (A) |
.10u |
| Polarity |
PNP |
| @VCE (test) (V) |
6.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
1.0m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.25 W |
| Maximum Collector-Base Voltage |Vcb| |
15 V |
| Maximum Collector-Emitter Voltage |Vce| |
15 V |
| Maximum Emitter-Base Voltage |Veb| |
15 V |
| Maximum Collector Current |Ic max| |
0.02 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
60 pF |
| Transition Frequency (ft): |
0.45 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
| SKU |
135739 |