BCY58AP

SKU: BCY58AP

BCY58AP Transistor Silicon NPN CASE: TO226 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO226
Manufacturer	Generic
Vbr CEO	32
Max. PD (W)	400m
C(ob) (F)	6.0p
t(on) Delay (S)	35n-
t(f) Max. (S)	80n-
hfe	40
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	.20n-
Polarity	NPN
Tr Max. (s)	50n-
t(stor) Max. (S)	400n-
Trans. Freq (Hz) Min.	250M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	175
@Ic (A)	100m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.39 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Collector-Emitter Voltage \|Vce\|	32 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	7 pF
Transition Frequency (ft):	120 MHz
Forward Current Transfer Ratio (hFE), MIN	125
SKU	1281091

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