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BCY58BP
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BCY58BP

SKU: BCY58BP
BCY58BP Transistor Silicon NPN CASE: TO226 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO226
Manufacturer Generic
Vbr CEO 32
Max. PD (W) 400m
C(ob) (F) 6.0p
t(on) Delay (S) 35n-
t(f) Max. (S) 80n-
hfe 45
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) .20n-
Polarity NPN
Tr Max. (s) 50n-
t(stor) Max. (S) 400n-
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 100m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.39 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 32 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 175
SKU 372293
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