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BCY65VIII
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BCY65VIII

SKU: BCY65VIII
BCY65VIII Transistor Silicon NPN CASE: TO18 MAKE: Generic
Product specifications
Equivalent BCY65VII
Type Transistor Silicon NPN
Case TO18
Manufacturer Generic
Vbr CEO 60
Max. PD (W) 345m
C(ob) (F) 6.0p
t(on) Delay (S) 35n-
Derate (Amb) (W/°C) 2.2m
t(f) Max. (S) 80n-
hfe 250
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 200p
Polarity NPN
Tr Max. (s) 50n-
t(stor) Max. (S) 400n-
Trans. Freq (Hz) Min. 250M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 600776
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