The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD107C
View detailed images (13)

BD107C

SKU: BD107C
BD107C Transistor Silicon NPN CASE: TO3 MAKE: ITT Industries
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer ITT Industries
Vbr CEO 64
Max. PD (W) 12
Min hFE 250
Ic Max. (A) 2.5
@Ic (test) (A) 500m
Polarity NPN
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12 W
Maximum Collector-Base Voltage |Vcb| 64 V
Maximum Collector-Emitter Voltage |Vce| 64 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 739434
Back