BD109-10

SKU: BD109-10

BD109-10 Transistor Silicon NPN CASE: TO3 MAKE: Siemens Semiconductors

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Siemens Semiconductors
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	18
Max. hFE	160
Min hFE	63
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Tr Max. (s)	300n
Derate Above 25°C	144m
Trans. Freq (Hz) Min.	30M
Oper. Temp (°C) Max.	175
@VCE (V)	1.0
Pinout Equivalence Number	4-30
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	18 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	63
SKU	739431

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