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BD109-6
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BD109-6

SKU: BD109-6
BD109-6 Transistor Silicon NPN CASE: TO3 MAKE: Siemens Semiconductors
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Siemens Semiconductors
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 18
Max. hFE 100
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 300m
Derate Above 25°C 144m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 1.0
Pinout Equivalence Number 4-30
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 18 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 739429
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