The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD109

BD109

SKU: BD109
BD109 Transistor Silicon NPN CASE: SOT9 MAKE: Discrete Semiconductor Industries - DSI
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 8 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case SOT9
Manufacturer Discrete Semiconductor Industries - DSI
Vbr CBO 400
Vbr CEO 40
Ckts Per Dev. 1
Max. PD (W) 15
t(f) Max. (S) 900n
Max. hFE 120
Min hFE 20
Ic Max. (A) 2.0
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 1.2u
Therm Res. (J-C) 300m
Derate Above 25°C 142m
VCE(sat) Max. 2.5
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 125
Isolated Case (Y/N) Yes
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 18 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 313704
Back