The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
BD111
View detailed images (13)

BD111

SKU: BD111
BD111 Transistor Silicon NPN CASE: TO3 MAKE: SGS Thomson
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • More pieces shipped in 14 days
?
Product specifications
Equivalent BD111A
Type Transistor Silicon NPN
Case TO3
Manufacturer SGS Thomson
Vbr CBO 450
Vbr CEO 450
Ckts Per Dev. 1
Max. PD (W) 150
t(f) Max. (S) 900n
Max. hFE 100-
Min hFE 50
Ic Max. (A) 40
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 1.2u
Therm Res. (J-C) 300m
VCE(sat) Max. 2.5
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Isolated Case (Y/N) Yes
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 135811
Back